Technische Details 2N4919 MOTOROLA
Description: TRANS PNP 60V 1A TO-126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A, Current - Collector Cutoff (Max): 500µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V, Frequency - Transition: 3MHz, Supplier Device Package: TO-126, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 30 W.
Weitere Produktangebote 2N4919
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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2N4919 | onsemi |
 Description: TRANS PNP 60V 1A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V Frequency - Transition: 3MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
2N4919 | onsemi |
Bipolar Transistors - BJT 3A 60V 30W PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N4919 |
|
Hersteller: onsemi
Description: TRANS PNP 60V 1A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
Description: TRANS PNP 60V 1A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N4919 |
|
Hersteller: onsemi
Bipolar Transistors - BJT 3A 60V 30W PNP
Bipolar Transistors - BJT 3A 60V 30W PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH