Technische Details 2N4919 MOTOROLA
Description: TRANS PNP 60V 1A TO-126, Power - Max: 30 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: TO-126, Frequency - Transition: 3MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V, Current - Collector Cutoff (Max): 500µA, Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Packaging: Bulk.
Weitere Produktangebote 2N4919
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2N4919 | onsemi |
 Description: TRANS PNP 60V 1A TO-126Power - Max: 30 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-126 Frequency - Transition: 3MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
2N4919 | onsemi |
Bipolar Transistors - BJT 3A 60V 30W PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N4919 |
|
Hersteller: onsemi
Description: TRANS PNP 60V 1A TO-126
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-126
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS PNP 60V 1A TO-126
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-126
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N4919 |
|
Hersteller: onsemi
Bipolar Transistors - BJT 3A 60V 30W PNP
Bipolar Transistors - BJT 3A 60V 30W PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH