Technische Details 2N4998 MOTOROLA
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-210AA, TO-59-4, Stud, Mounting Type: Stud Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA, Supplier Device Package: TO-59, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 35 W.
Weitere Produktangebote 2N4998
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2N4998 | Hersteller : Microchip Technology |
 Trans GP BJT NPN 80V 2A 3-Pin TO-59 |
Produkt ist nicht verfügbar |
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| 2N4998 | Hersteller : Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 35 W |
Produkt ist nicht verfügbar |