Technische Details 2N5007 MOTOROLA
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud, Mounting Type: Stud Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 5mA, Supplier Device Package: TO-61, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 100 W.
Weitere Produktangebote 2N5007
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
2N5007 | Hersteller : Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 5mA Supplier Device Package: TO-61 Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 100 W |
Produkt ist nicht verfügbar |
||
2N5007 | Hersteller : Microchip Technology | Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |