2N5086 TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Supplier Device Package: TO-92-3
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 50 mA
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
Packaging: Box
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Technische Details 2N5086 TIN/LEAD Central Semiconductor Corp
Description: 50V 50MA 625MW TH TRANSISTOR-SMA, Current - Collector Cutoff (Max): 10nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: PNP, Supplier Device Package: TO-92-3, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 50 mA, Frequency - Transition: 40MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V, Packaging: Box.
Weitere Produktangebote 2N5086 TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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2N5086 TIN/LEAD | Central Semiconductor |
Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 625mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N5086 TIN/LEAD |
|
Hersteller: Central Semiconductor
Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 625mW
Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 625mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH