2N5114UB/TR Microchip Technology
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Qualification: MIL-PRF-19500
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Technische Details 2N5114UB/TR Microchip Technology
Description: JFET P-CH 30V UB, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 200°C (TJ), FET Type: P-Channel, Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V, Voltage - Breakdown (V(BR)GSS): 30 V, Supplier Device Package: UB, Grade: Military, Part Status: Active, Drain to Source Voltage (Vdss): 30 V, Power - Max: 500 mW, Resistance - RDS(On): 75 Ohms, Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA, Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V, Qualification: MIL-PRF-19500.
Weitere Produktangebote 2N5114UB/TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| 2N5114UB/TR | Microchip Technology |
JFETs JFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5114UB/TR | MICROCHIP TECHNOLOGY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; 30V; 90mA; 500mW Drain-source voltage: 30V Drain current: 90mA On-state resistance: 75Ω Power dissipation: 0.5W Gate-source voltage: 30V Kind of package: reel; tape Mounting: SMD Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N5114UB/TR |
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Hersteller: Microchip Technology
JFETs JFET
JFETs JFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5114UB/TR |
![]() |
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 30V; 90mA; 500mW
Drain-source voltage: 30V
Drain current: 90mA
On-state resistance: 75Ω
Power dissipation: 0.5W
Gate-source voltage: 30V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 30V; 90mA; 500mW
Drain-source voltage: 30V
Drain current: 90mA
On-state resistance: 75Ω
Power dissipation: 0.5W
Gate-source voltage: 30V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen
Stück im Wert von UAH

