Produkte > CENTRAL SEMICONDUCTOR > 2N5179 TIN/LEAD

2N5179 TIN/LEAD Central Semiconductor


2n5179.pdf Hersteller: Central Semiconductor
NPN Silicon Transistor
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 2N5179 TIN/LEAD Central Semiconductor

Description: 12V 50MA 200MW TH TRANSISTOR-SMA, Packaging: Box, Package / Case: TO-206AF, TO-72-4 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Gain: 15dB, Power - Max: 300mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V, Frequency - Transition: 2GHz, Noise Figure (dB Typ @ f): 4.5dB @ 200MHz, Supplier Device Package: TO-72.

Weitere Produktangebote 2N5179 TIN/LEAD

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
2N5179 TIN/LEAD 2N5179 TIN/LEAD Hersteller : Central Semiconductor Corp Description: 12V 50MA 200MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 15dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Supplier Device Package: TO-72
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N5179 TIN/LEAD 2N5179 TIN/LEAD Hersteller : Central Semiconductor 2n5179-1652507.pdf Bipolar Transistors - BJT 20Vcbo 12Vceo 2.5Vebo 50mA 200mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH