Technische Details 2N5190 On Semiconductor
Description: TRANS NPN 40V 4A TO126, Packaging: Bulk, Power - Max: 40 W, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 4 A, Part Status: Obsolete, Supplier Device Package: TO-126, Frequency - Transition: 2MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V, Current - Collector Cutoff (Max): 1mA, Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3.
Weitere Produktangebote 2N5190
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
2N5190 | onsemi |
 Description: TRANS NPN 40V 4A TO126Packaging: Bulk Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 4 A Part Status: Obsolete Supplier Device Package: TO-126 Frequency - Transition: 2MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
2N5190 | Central Semiconductor Corp |
Description: TRANS NPN 40V 4A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V Frequency - Transition: 2MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 40 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N5190 | Central Semiconductor |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5190 | Infineon Technologies |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5190 | onsemi |
Bipolar Transistors - BJT BIP C77 NPN 4A 40V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N5190 |
|
Hersteller: onsemi
Description: TRANS NPN 40V 4A TO126
Packaging: Bulk
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Description: TRANS NPN 40V 4A TO126
Packaging: Bulk
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5190 |
|
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 40V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W
Description: TRANS NPN 40V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5190 |
|
Hersteller: Central Semiconductor
Bipolar Transistors - BJT
Bipolar Transistors - BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5190 |
|
Hersteller: Infineon Technologies
Bipolar Transistors - BJT
Bipolar Transistors - BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5190 |
|
Hersteller: onsemi
Bipolar Transistors - BJT BIP C77 NPN 4A 40V
Bipolar Transistors - BJT BIP C77 NPN 4A 40V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH