2N5209 APM TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: TO-92-3
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Technische Details 2N5209 APM TIN/LEAD Central Semiconductor Corp
Description: 50V 50MA 350MW TH TRANSISTOR-SMA, Frequency - Transition: 30MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Tape & Box (TB), Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 50 mA, Supplier Device Package: TO-92-3.
Weitere Produktangebote 2N5209 APM TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| 2N5209 APM TIN/LEAD | Central Semiconductor | Bipolar Transistors - BJT 50V,50mA,350mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N5209 APM TIN/LEAD |
Hersteller: Central Semiconductor
Bipolar Transistors - BJT 50V,50mA,350mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise
Bipolar Transistors - BJT 50V,50mA,350mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH