2N5320

Hersteller: Microchip Technology
Trans GP BJT NPN 75V 2A 10000mW 3-Pin TO-39

Hersteller: Central Semiconductor
Trans GP BJT NPN 75V 2A 10000mW 3-Pin TO-39 Box

Hersteller: Central Semiconductor Corp.
Транзистор NPN, Ptot, Вт = 10, Uceo, В = 75, Ic = 2 А, Тип монт. = вивідний, ft, МГц = 50, hFE = 30 @ 500 мA, 4 В, Icutoff-max = 500 нА, Uceo(sat), В @ Ic, Ib = 0,5 @ 50 мA, 500 мА, Тексп, °С = -65...+200,... Транзистори Корпус: TO-39-3 Од. вим: шт
Anzahl je Verpackung: 500 Stücke

Hersteller: onsemi
Description: TRANS NPN 75V 2A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 10 W

Hersteller: Microchip Technology
Description: TRANS NPN 75V 2A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 10 W

Hersteller: Microchip Technology
Bipolar Transistors - BJT Custom

Hersteller: onsemi

Hersteller: STMicroelectronics
Bipolar Transistors - BJT

Hersteller: Welwyn Components / TT Electronics
Bipolar Transistors - BJT