Technische Details 2N5322E3 Microchip Technology
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Supplier Device Package: TO-5AA, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 75 V, Power - Max: 10 W.
Weitere Produktangebote 2N5322E3
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2N5322E3 | Hersteller : Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Supplier Device Package: TO-5AA Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 75 V Power - Max: 10 W |
Produkt ist nicht verfügbar |
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| 2N5322E3 | Hersteller : Microchip Technology | Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |