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Technische Details 2N5339 Microchip Technology
Description: NPN TRANSISTOR, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 5 A, Supplier Device Package: TO-39, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V, Current - Collector Cutoff (Max): 100µA, Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A, Operating Temperature: -55°C ~ 200°C, Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bulk.
Weitere Produktangebote 2N5339
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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| 2N5339 | Hersteller : MOTOROLA |
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auf Bestellung 5680 Stücke: Lieferzeit 21-28 Tag (e) |
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2N5339 | Hersteller : Microchip Technology |
Description: NPN TRANSISTOR Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: TO-39 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Operating Temperature: -55°C ~ 200°C Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
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2N5339 | Hersteller : STMicroelectronics |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |