2N5389 General Semiconductor
Hersteller: General Semiconductor
Description: LOW FREQ SILICON POWER NPN TRANS
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 175 W
Description: LOW FREQ SILICON POWER NPN TRANS
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 175 W
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 812.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N5389 General Semiconductor
Description: LOW FREQ SILICON POWER NPN TRANS, Packaging: Bulk, Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud, Mounting Type: Stud Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Supplier Device Package: TO-61, Current - Collector (Ic) (Max): 7 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 175 W.
Weitere Produktangebote 2N5389
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
2N5389 | Hersteller : Microchip Technology | Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |