2N5401 PB FREE Central Semiconductor
auf Bestellung 1778 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 488+ | 0.30 EUR |
| 560+ | 0.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N5401 PB FREE Central Semiconductor
Description: 150V 600MA 625MW TH TRANSISTOR-S, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 625 mW.
Weitere Produktangebote 2N5401 PB FREE nach Preis ab 0.33 EUR bis 1.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
2N5401 PBFREE | Hersteller : Central Semiconductor |
 Bipolar Transistors - BJT PNP Gen Pr Amp |
auf Bestellung 12894 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
2N5401 PBFREE | Hersteller : Central Semiconductor Corp |
Description: 150V 600MA 625MW TH TRANSISTOR-S Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |