2N5401 TRE PBFREE Central Semiconductor
Hersteller: Central Semiconductor
Bipolar Transistors - BJT 150V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage
Bipolar Transistors - BJT 150V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage
auf Bestellung 1880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 1.39 EUR |
10+ | 0.86 EUR |
100+ | 0.59 EUR |
500+ | 0.46 EUR |
1000+ | 0.4 EUR |
2000+ | 0.34 EUR |
4000+ | 0.31 EUR |
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Technische Details 2N5401 TRE PBFREE Central Semiconductor
Description: 150V 600MA 625MW TH TRANSISTOR-S, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 625 mW.
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2N5401 TRE PBFREE | Hersteller : Central Semiconductor Corp |
Description: 150V 600MA 625MW TH TRANSISTOR-S Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 625 mW |
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