2N5401YTA ON Semiconductor
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 995+ | 0.15 EUR |
| 1367+ | 0.1 EUR |
| 1563+ | 0.087 EUR |
| 2000+ | 0.073 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N5401YTA ON Semiconductor
Description: TRANS PNP 150V 0.6A TO-92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V, Frequency - Transition: 400MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 625 mW.
Weitere Produktangebote 2N5401YTA nach Preis ab 0.062 EUR bis 3.58 EUR
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2N5401YTA | Hersteller : ON Semiconductor |
 Trans GP BJT PNP 150V 0.6A 625mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5401YTA | Hersteller : ON Semiconductor |
Trans GP BJT PNP 150V 0.6A 625mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5401YTA | Hersteller : onsemi |
Description: TRANS PNP 150V 0.6A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 625 mW |
auf Bestellung 2430 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5401YTA | Hersteller : ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92 Formed Kind of package: Ammo Pack Type of transistor: PNP Power dissipation: 0.625W Collector current: 0.6A Polarisation: bipolar Current gain: 40...200 Collector-emitter voltage: 150V Case: TO92 Formed Frequency: 100...400MHz Mounting: THT Anzahl je Verpackung: 20 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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2N5401YTA | Hersteller : ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92 Formed Kind of package: Ammo Pack Type of transistor: PNP Power dissipation: 0.625W Collector current: 0.6A Polarisation: bipolar Current gain: 40...200 Collector-emitter voltage: 150V Case: TO92 Formed Frequency: 100...400MHz Mounting: THT |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5401YTA | Hersteller : ON Semiconductor |
Trans GP BJT PNP 150V 0.6A 625mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 14000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5401YTA Транзисторы |
auf Bestellung 11 Stücke: Lieferzeit 7-21 Tag (e) |
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2N5401YTA | Hersteller : ON Semiconductor |
Trans GP BJT PNP 150V 0.6A 625mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
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2N5401YTA | Hersteller : ON Semiconductor |
Trans GP BJT PNP 150V 0.6A 625mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
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2N5401YTA | Hersteller : onsemi |
Description: TRANS PNP 150V 0.6A TO-92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N5401YTA | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT PNP Transistor General Purpose |
Produkt ist nicht verfügbar |