Technische Details 2N5416L MOTOROLA
Description: TRANS PNP 300V 1A TO-5, Power - Max: 750 mW, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: TO-5, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Current - Collector Cutoff (Max): 1mA, Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can, Packaging: Bulk.
Weitere Produktangebote 2N5416L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| 2N5416L | Microchip Technology |
 Description: TRANS PNP 300V 1A TO-5Power - Max: 750 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-5 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5416L | Microchip Technology |
Bipolar Transistors - BJT 300 V Power BJT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N5416L |
|
Hersteller: Microchip Technology
Description: TRANS PNP 300V 1A TO-5
Power - Max: 750 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Description: TRANS PNP 300V 1A TO-5
Power - Max: 750 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5416L |
|
Hersteller: Microchip Technology
Bipolar Transistors - BJT 300 V Power BJT
Bipolar Transistors - BJT 300 V Power BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH