2N5416UAC Microchip Technology
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Description: POWER BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
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Technische Details 2N5416UAC Microchip Technology
Description: POWER BJT, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Supplier Device Package: UA, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 750 mW.
Weitere Produktangebote 2N5416UAC
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2N5416UAC | Hersteller : Microchip Technology | Bipolar Transistors - BJT 300 V Power BJT |
Produkt ist nicht verfügbar |