
auf Bestellung 84000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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2968+ | 0.05 EUR |
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Technische Details 2N5550TFR ON Semiconductor
Description: TRANS NPN 140V 0.6A TO-92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 140 V, Power - Max: 625 mW.
Weitere Produktangebote 2N5550TFR nach Preis ab 0.04 EUR bis 0.44 EUR
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2N5550TFR | Hersteller : ON Semiconductor |
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auf Bestellung 9590 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5550TFR | Hersteller : ON Semiconductor |
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auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5550TFR | Hersteller : Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 112874 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TFR | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TFR | Hersteller : ON Semiconductor |
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auf Bestellung 9590 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5550TFR | Hersteller : onsemi / Fairchild |
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auf Bestellung 8969 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TFR | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 101585 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TFR | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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2N5550TFR | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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2N5550TFR | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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2N5550TFR | Hersteller : ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 50...200 Mounting: THT Kind of package: reel; tape Frequency: 100...300MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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2N5550TFR | Hersteller : ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 50...200 Mounting: THT Kind of package: reel; tape Frequency: 100...300MHz |
Produkt ist nicht verfügbar |