2N5551TA ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2075+ | 0.084 EUR |
| 6000+ | 0.077 EUR |
| 10000+ | 0.075 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N5551TA ON Semiconductor
Description: ONSEMI - 2N5551TA - Bipolarer Einzeltransistor (BJT), NPN, 160 V, 600 mA, 625 mW, TO-92, Durchsteckmontage, tariffCode: 85412100, Transistormontage: Durchsteckmontage, euEccn: NLR, rohsCompliant: YES, DC-Stromverstärkung (hFE), min.: 30hFE, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, Verlustleistung: 625mW, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-92, Dauerkollektorstrom: 600mA, Anzahl der Pins: 3Pin(s), Produktpalette: -, Kollektor-Emitter-Spannung, max.: 160V, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: NPN, usEccn: EAR99, Übergangsfrequenz: 100MHz, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote 2N5551TA nach Preis ab 0.098 EUR bis 0.55 EUR
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2N5551TA | ON Semiconductor |
 Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551TA | ON Semiconductor |
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551TA | onsemi |
Description: TRANS NPN 160V 0.6A TO-92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5551TA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 80...250 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
auf Bestellung 971 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551TA | onsemi |
Bipolar Transistors - BJT NPN Transistor General Purpose |
auf Bestellung 64986 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5551TA | onsemi |
Description: TRANS NPN 160V 0.6A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
auf Bestellung 1622 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5551TA | ONSEMI |
Description: ONSEMI - 2N5551TA - Bipolarer Einzeltransistor (BJT), NPN, 160 V, 600 mA, 625 mW, TO-92, Durchsteckmontage tariffCode: 85412100 Transistormontage: Durchsteckmontage euEccn: NLR rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 30hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Verlustleistung: 625mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-92 Dauerkollektorstrom: 600mA Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 160V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN usEccn: EAR99 Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C |
auf Bestellung 8240 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N5551TA |
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Hersteller: ON Semiconductor
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Fan-Fold
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Fan-Fold
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.099 EUR |
| 2N5551TA |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Fan-Fold
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Fan-Fold
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.099 EUR |
| 2N5551TA |
|
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.11 EUR |
| 4000+ | 0.1 EUR |
| 2N5551TA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 971 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.35 EUR |
| 317+ | 0.27 EUR |
| 365+ | 0.24 EUR |
| 528+ | 0.17 EUR |
| 618+ | 0.14 EUR |
| 878+ | 0.098 EUR |
| 2N5551TA |
|
Hersteller: onsemi
Bipolar Transistors - BJT NPN Transistor General Purpose
Bipolar Transistors - BJT NPN Transistor General Purpose
auf Bestellung 64986 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.54 EUR |
| 11+ | 0.32 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 2000+ | 0.11 EUR |
| 2N5551TA |
|
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 1622 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 0.55 EUR |
| 63+ | 0.33 EUR |
| 102+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 2N5551TA |
|
Hersteller: ONSEMI
Description: ONSEMI - 2N5551TA - Bipolarer Einzeltransistor (BJT), NPN, 160 V, 600 mA, 625 mW, TO-92, Durchsteckmontage
tariffCode: 85412100
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 30hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Verlustleistung: 625mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-92
Dauerkollektorstrom: 600mA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 160V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
usEccn: EAR99
Übergangsfrequenz: 100MHz
Betriebstemperatur, max.: 150°C
Description: ONSEMI - 2N5551TA - Bipolarer Einzeltransistor (BJT), NPN, 160 V, 600 mA, 625 mW, TO-92, Durchsteckmontage
tariffCode: 85412100
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 30hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Verlustleistung: 625mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-92
Dauerkollektorstrom: 600mA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 160V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
usEccn: EAR99
Übergangsfrequenz: 100MHz
Betriebstemperatur, max.: 150°C
auf Bestellung 8240 Stücke:
Lieferzeit 14-21 Tag (e)