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2N5598 General Semiconductor

SOLDC001-B-1.pdf?t.download=true&u=5oefqw Hersteller: General Semiconductor
Description: LOW FREQUENCY SILICON POWER NPN
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 20 W
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Technische Details 2N5598 General Semiconductor

Description: LOW FREQUENCY SILICON POWER NPN, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA, Supplier Device Package: TO-66 (TO-213AA), Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 20 W.

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2N5598 Hersteller : Microchip Technology SOLDC001-B-1.pdf?t.download=true&u=5oefqw Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 20 W
Produkt ist nicht verfügbar
2N5598 Hersteller : Microchip Technology SOLDC001-B-1.pdf?t.download=true&u=5oefqw Bipolar Transistors - BJT Power BJT
Produkt ist nicht verfügbar