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2N5655G

2N5655G onsemi

2N5655G%2C57G.pdf Hersteller: onsemi
Description: TRANS NPN 250V 0.5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 20 W
auf Bestellung 2155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1480+0.33 EUR
Mindestbestellmenge: 1480
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Technische Details 2N5655G onsemi

Description: TRANS NPN 250V 0.5A TO126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV, Frequency - Transition: 10MHz, Supplier Device Package: TO-126, Part Status: Obsolete, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 250 V, Power - Max: 20 W.

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2N5655G Hersteller : ONSEMI ONSM-S-A0013339538-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2N5655G - 2N5655G, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 4374 Stücke:
Lieferzeit 14-21 Tag (e)
2N5655G 2N5655G Hersteller : ON Semiconductor 72n5655-d.pdf Trans GP BJT NPN 250V 0.5A 20000mW 3-Pin(3+Tab) TO-225 Box
Produkt ist nicht verfügbar
2N5655G 2N5655G Hersteller : onsemi 2N5655G%2C57G.pdf Description: TRANS NPN 250V 0.5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 20 W
Produkt ist nicht verfügbar
2N5655G 2N5655G Hersteller : ON Semiconductor 2N5655_D-1801556.pdf Bipolar Transistors - BJT 1A 250V 20W NPN
Produkt ist nicht verfügbar