Technische Details 2N6028RLRA ON
Description: PROGRAMMABLE UJT 40V TO92, Power Dissipation (Max): 300 mW, Current - Gate to Anode Leakage (Igao): 10 nA, Part Status: Obsolete, Current - Valley (Iv): 25 µA, Voltage - Offset (Vt): 600 mV, Current - Peak: 150 nA, Voltage: 40V, Voltage - Output: 11V, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Cut Tape (CT).
Weitere Produktangebote 2N6028RLRA
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| 2N6028RLRA | Hersteller : On Semiconductor |
 Программируемый однопереходный транзистор (PUT), 40V, 0.3Вт, TO-92 Транзистори |
Produkt ist nicht verfügbar |
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2N6028RLRA | Hersteller : onsemi |
Description: PROGRAMMABLE UJT 40V TO92 Power Dissipation (Max): 300 mW Current - Gate to Anode Leakage (Igao): 10 nA Part Status: Obsolete Current - Valley (Iv): 25 µA Voltage - Offset (Vt): 600 mV Current - Peak: 150 nA Voltage: 40V Voltage - Output: 11V Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |