Technische Details 2N6036G On Semiconductor
Description: TRANS PNP DARL 80V 4A TO-126, Part Status: Obsolete, Supplier Device Package: TO-126, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V, Current - Collector Cutoff (Max): 100µA, Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A, Operating Temperature: -65°C ~ 150°C (TJ), Power - Max: 40 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 4 A, Transistor Type: PNP - Darlington, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Packaging: Bulk.
Weitere Produktangebote 2N6036G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| 2N6036G | Hersteller : On Semiconductor |
 TRANS PNP DARL 80V 4A TO225AA Транзистори |
Produkt ist nicht verfügbar |
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2N6036G | Hersteller : onsemi |
Description: TRANS PNP DARL 80V 4A TO-126 Part Status: Obsolete Supplier Device Package: TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Operating Temperature: -65°C ~ 150°C (TJ) Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 4 A Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
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2N6036G | Hersteller : onsemi |
Darlington Transistors 4A 80V Bipolar Power PNP |
Produkt ist nicht verfügbar |