Technische Details 2N6300 MOTOROLA
Description: TRANS NPN DARL 60V 8A TO66, Packaging: Bulk, Power - Max: 75 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 8 A, Supplier Device Package: TO-66 (TO-213AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V, Current - Collector Cutoff (Max): 500µA, Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A, Operating Temperature: -55°C ~ 200°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Through Hole, Package / Case: TO-213AA, TO-66-2.
Weitere Produktangebote 2N6300
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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2N6300 | Microchip Technology |
 Description: TRANS NPN DARL 60V 8A TO66Packaging: Bulk Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 8 A Supplier Device Package: TO-66 (TO-213AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N6300 | Microchip Technology |
Bipolar Transistors - BJT 60V 8A 75W NPN Power BJT THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N6300 |
|
Hersteller: Microchip Technology
Description: TRANS NPN DARL 60V 8A TO66
Packaging: Bulk
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Description: TRANS NPN DARL 60V 8A TO66
Packaging: Bulk
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N6300 |
|
Hersteller: Microchip Technology
Bipolar Transistors - BJT 60V 8A 75W NPN Power BJT THT
Bipolar Transistors - BJT 60V 8A 75W NPN Power BJT THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH