2N6308T1 Microchip Technology

Description: POWER BJT, Power - Max: 125 W, Voltage - Collector Emitter Breakdown (Max): 350 V, Current - Collector (Ic) (Max): 8 A, Part Status: Active, Supplier Device Package: TO-204AD (TO-3), DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V, Current - Collector Cutoff (Max): 50µA, Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A, Operating Temperature: -65°C ~ 200°C, Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-204AA, TO-3, Packaging: Bulk.