Technische Details 2N6316 ON
Description: TRANS NPN 80V 7A TO66, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 1.75A, 7A, Current - Collector Cutoff (Max): 500µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 4V, Supplier Device Package: TO-66 (TO-213AA), Current - Collector (Ic) (Max): 7 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 90 W.
Weitere Produktangebote 2N6316
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
2N6316 | Microchip Technology |
 Description: TRANS NPN 80V 7A TO66Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 1.75A, 7A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 4V Supplier Device Package: TO-66 (TO-213AA) Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 90 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N6316 | Microsemi |
Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N6316 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 80V 7A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.75A, 7A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 4V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 90 W
Description: TRANS NPN 80V 7A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.75A, 7A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 4V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 90 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6316 |
|
Hersteller: Microsemi
Bipolar Transistors - BJT Power BJT
Bipolar Transistors - BJT Power BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH