2N6352P Microchip Technology
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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Technische Details 2N6352P Microchip Technology
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-213AA, TO-66-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V, Supplier Device Package: TO-66 (TO-213AA), Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 2 W.
Weitere Produktangebote 2N6352P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2N6352P | Hersteller : Microchip Technology |
 Bipolar Transistors - BJT 80V 5A 1W Pin D-Test NPN Power BJT THT |
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