2N6517 PBFREE Central Semiconductor

Description: 350V 500MA 625MW TH TRANSISTOR-S, Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Box, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 350 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: TO-92-3, Frequency - Transition: 40MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V, Current - Collector Cutoff (Max): 50nA (ICBO).