2N6668 PBFREE Central Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 4.75 EUR |
| 10+ | 4.28 EUR |
| 25+ | 4.03 EUR |
| 100+ | 3.45 EUR |
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Technische Details 2N6668 PBFREE Central Semiconductor
Description: 10A 80V TH TRANSISTOR-BIPOLAR PO, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 10mA, 5A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V, Frequency - Transition: 20MHz, Supplier Device Package: TO-220-3, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 80 V.
Weitere Produktangebote 2N6668 PBFREE
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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2N6668 PBFREE | Central Semiconductor Corp |
 Description: 10A 80V TH TRANSISTOR-BIPOLAR POPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 10mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Frequency - Transition: 20MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 550 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N6668 PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: 10A 80V TH TRANSISTOR-BIPOLAR PO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 10mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Description: 10A 80V TH TRANSISTOR-BIPOLAR PO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 10mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 550 Stücke
Im Einkaufswagen
Stück im Wert von UAH