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2N6714 TIN/LEAD Central Semiconductor Corp

2N671(4,5), 2N672(6,7).PDF
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 30V 2A TO237
Packaging: Cut Tape (CT)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-237
Frequency - Transition: 500MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-237AA
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Anzahl Preis
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500+1.02 EUR
1000+0.83 EUR
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Technische Details 2N6714 TIN/LEAD Central Semiconductor Corp

Description: TRANS NPN 30V 2A TO237, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: TO-237, Frequency - Transition: 500MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-237AA, Packaging: Tape & Reel (TR).

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2N6714 TIN/LEAD Central Semiconductor Corp 2N671(4,5), 2N672(6,7).PDF Description: TRANS NPN 30V 2A TO237
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-237
Frequency - Transition: 500MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-237AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N6714 TIN/LEAD 2N671(4,5), 2N672(6,7).PDF
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 30V 2A TO237
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-237
Frequency - Transition: 500MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-237AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH