2N7002 TR13 PBFREE Central Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.01 EUR |
| 10+ | 0.62 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.31 EUR |
| 2500+ | 0.27 EUR |
| 5000+ | 0.24 EUR |
| 10000+ | 0.18 EUR |
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Technische Details 2N7002 TR13 PBFREE Central Semiconductor
Description: MOSFET N-CH 60V 115MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): 40V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 350mW (Ta), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 115mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2N7002 TR13 PBFREE nach Preis ab 0.63 EUR bis 1.02 EUR
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2N7002 TR13 PBFREE | Central Semiconductor Corp |
 Description: MOSFET N-CH 60V 115MA SOT23Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): 40V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002 TR13 PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 60V 115MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): 40V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 115MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): 40V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 34+ | 0.63 EUR |