2N7002-T1-E3 Vishay
Hersteller: Vishay
Trans MOSFET N-CH 60V 0.115A 2N7002-T1-E3 VISHAY T2N7002 VIS
Anzahl je Verpackung: 100 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 200+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N7002-T1-E3 Vishay
Description: MOSFET N-CH 60V 115MA TO236, Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: TO-236, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 200mW (Ta).
Weitere Produktangebote 2N7002-T1-E3 nach Preis ab 0.43 EUR bis 1.53 EUR
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2N7002-T1-E3 | Vishay / Siliconix |
MOSFETs 60V 0.115A 0.2W |
auf Bestellung 240327 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 115MA TO236 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: TO-236 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 2235 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002-T1-E3 | Vishay |
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| 2N7002T1E3 | FAIRCHILDR |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2N7002-T1-E3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 60V 0.115A 0.2W
MOSFETs 60V 0.115A 0.2W
auf Bestellung 240327 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.03 EUR |
| 10+ | 0.82 EUR |
| 9000+ | 0.76 EUR |
| 24000+ | 0.73 EUR |
| 2N7002-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 115MA TO236
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 115MA TO236
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2235 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.43 EUR |
| 2N7002-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
| 2N7002T1E3 |
Hersteller: FAIRCHILDR
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)