auf Bestellung 24839 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 0.21 EUR |
| 23+ | 0.13 EUR |
| 100+ | 0.079 EUR |
| 500+ | 0.058 EUR |
| 1000+ | 0.049 EUR |
| 3000+ | 0.044 EUR |
| 6000+ | 0.039 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N7002AK-QR Nexperia
Description: MOS DISCRETES, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240mA, Power Dissipation (Max): 320mW, Supplier Device Package: TO-236AB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.21 nC @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote 2N7002AK-QR nach Preis ab 0.049 EUR bis 0.21 EUR
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2N7002AK-QR | Hersteller : Nexperia USA Inc. |
 Description: MOS DISCRETESPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA Power Dissipation (Max): 320mW Supplier Device Package: TO-236AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.21 nC @ 10 V Qualification: AEC-Q101 |
auf Bestellung 2052 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002AK-QR | Hersteller : Nexperia |
N-channel Trench MOSFET Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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2N7002AK-QR | Hersteller : Nexperia |
N-channel Trench MOSFET Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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2N7002AK-QR | Hersteller : NEXPERIA |
N-channel Trench MOSFET Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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2N7002AK-QR | Hersteller : Nexperia USA Inc. |
Description: MOS DISCRETES Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA Power Dissipation (Max): 320mW Supplier Device Package: TO-236AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.21 nC @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |