2N7002AKRA-QZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET 2N-CH 60V 0.32A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW (Ta), 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.2pF @ 30V
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 315pC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: DFN1412-6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3476 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 39+ | 0.46 EUR |
| 64+ | 0.28 EUR |
| 102+ | 0.17 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| 2000+ | 0.1 EUR |
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Technische Details 2N7002AKRA-QZ Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.32A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 420mW (Ta), 5W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 9.2pF @ 30V, Rds On (Max) @ Id, Vgs: 2.9Ohm @ 100mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 315pC @ 10V, Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: DFN1412-6, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote 2N7002AKRA-QZ nach Preis ab 0.1 EUR bis 0.56 EUR
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2N7002AKRA-QZ | Hersteller : Nexperia |
MOSFETs 2N7002AKRA-Q/SOT1268/DFN1412-6 |
auf Bestellung 3082 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002AKRA-QZ | Hersteller : Nexperia |
Dual N-channel Trench MOSFET |
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2N7002AKRA-QZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 0.32A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 420mW (Ta), 5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 9.2pF @ 30V Rds On (Max) @ Id, Vgs: 2.9Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 315pC @ 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: DFN1412-6 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |