| Anzahl | Privatkunde |
|---|---|
| 4445+ | 0.039 EUR |
| 6000+ | 0.038 EUR |
| 24000+ | 0.037 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N7002BK,215 Nexperia
Description: NEXPERIA - 2N7002BK,215 - Leistungs-MOSFET, n-Kanal, 60 V, 350 mA, 1.6 ohm, SOT-23, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 350mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, MSL: -, Gate-Source-Schwellenspannung, max.: 1.6V, Verlustleistung: 440mW, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: SOT-23, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 1.6ohm.
Weitere Produktangebote 2N7002BK,215 nach Preis ab 0.048 EUR bis 0.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2N7002BK,215 | Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 350MA TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002BK,215 | Nexperia |
Trans MOSFET N-CH 60V 0.35A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 171000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BK,215 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.245A; Idm: 1.2A; 1.2W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.245A Power dissipation: 1.2W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 1.2A Gate charge: 0.6nC Version: ESD Kind of package: reel; tape |
auf Bestellung 2379 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BK,215 | Nexperia |
Transistor N-Channel MOSFET; 60V; 20V; 1,6Ohm; 350mA; 440mW; -55°C ~ 150°C; Equivalent: 2N7002BK,215; 2N7002BK.215; 2N7002BK T2N7002bk Anzahl je Verpackung: 100 Stücke |
auf Bestellung 18000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002BK,215 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 350MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 14780 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002BK,215 | Nexperia |
MOSFETs 2N7002BK/SOT23/TO-236AB |
auf Bestellung 7028 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002BK,215 | NEXPERIA |
Description: NEXPERIA - 2N7002BK,215 - Leistungs-MOSFET, n-Kanal, 60 V, 350 mA, 1.6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 350mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 1.6V Verlustleistung: 440mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1.6ohm |
auf Bestellung 35205 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BK,215 | NEXPERIA |
Description: NEXPERIA - 2N7002BK,215 - Leistungs-MOSFET, n-Kanal, 60 V, 350 mA, 1.6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 350mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: - Gate-Source-Schwellenspannung, max.: 1.6V Verlustleistung: 440mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1.6ohm |
auf Bestellung 35205 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2N7002BK,215 | NXP/Nexperia/We-En |
N-канальний ПТ, Udss, В = 60, Id = 350 мА, Ciss, пФ @ Uds, В = 50 @ 10, Qg, нКл = 0.6, Ugs(th) = 2.1 @ 250 мА, Р, Вт = 0,37 Вт, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 246 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| 2N7002BK,215 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 350MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 350MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.069 EUR |
| 6000+ | 0.062 EUR |
| 9000+ | 0.058 EUR |
| 2N7002BK,215 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 0.35A Automotive 3-Pin SOT-23 T/R
Trans MOSFET N-CH 60V 0.35A Automotive 3-Pin SOT-23 T/R
auf Bestellung 171000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.079 EUR |
| 6000+ | 0.064 EUR |
| 9000+ | 0.055 EUR |
| 24000+ | 0.048 EUR |
| 2N7002BK,215 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.245A; Idm: 1.2A; 1.2W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.245A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 1.2A
Gate charge: 0.6nC
Version: ESD
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.245A; Idm: 1.2A; 1.2W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.245A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 1.2A
Gate charge: 0.6nC
Version: ESD
Kind of package: reel; tape
auf Bestellung 2379 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.086 EUR |
| 1283+ | 0.067 EUR |
| 1578+ | 0.054 EUR |
| 1673+ | 0.051 EUR |
| 1806+ | 0.048 EUR |
| 2N7002BK,215 |
|
Hersteller: Nexperia
Transistor N-Channel MOSFET; 60V; 20V; 1,6Ohm; 350mA; 440mW; -55°C ~ 150°C; Equivalent: 2N7002BK,215; 2N7002BK.215; 2N7002BK T2N7002bk
Anzahl je Verpackung: 100 Stücke
Transistor N-Channel MOSFET; 60V; 20V; 1,6Ohm; 350mA; 440mW; -55°C ~ 150°C; Equivalent: 2N7002BK,215; 2N7002BK.215; 2N7002BK T2N7002bk
Anzahl je Verpackung: 100 Stücke
auf Bestellung 18000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.23 EUR |
| 2N7002BK,215 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 350MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 350MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14780 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 0.36 EUR |
| 99+ | 0.21 EUR |
| 160+ | 0.13 EUR |
| 500+ | 0.095 EUR |
| 1000+ | 0.084 EUR |
| 2N7002BK,215 |
|
Hersteller: Nexperia
MOSFETs 2N7002BK/SOT23/TO-236AB
MOSFETs 2N7002BK/SOT23/TO-236AB
auf Bestellung 7028 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 0.39 EUR |
| 15+ | 0.23 EUR |
| 100+ | 0.14 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.09 EUR |
| 3000+ | 0.069 EUR |
| 2N7002BK,215 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - 2N7002BK,215 - Leistungs-MOSFET, n-Kanal, 60 V, 350 mA, 1.6 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 350mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 440mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1.6ohm
Description: NEXPERIA - 2N7002BK,215 - Leistungs-MOSFET, n-Kanal, 60 V, 350 mA, 1.6 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 350mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 440mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1.6ohm
auf Bestellung 35205 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 375+ | 0.67 EUR |
| 618+ | 0.38 EUR |
| 1051+ | 0.2 EUR |
| 1462+ | 0.14 EUR |
| 1659+ | 0.13 EUR |
| 2N7002BK,215 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - 2N7002BK,215 - Leistungs-MOSFET, n-Kanal, 60 V, 350 mA, 1.6 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 350mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: -
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 440mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1.6ohm
Description: NEXPERIA - 2N7002BK,215 - Leistungs-MOSFET, n-Kanal, 60 V, 350 mA, 1.6 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 350mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: -
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 440mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1.6ohm
auf Bestellung 35205 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.67 EUR |
| 618+ | 0.38 EUR |
| 1051+ | 0.2 EUR |
| 1462+ | 0.14 EUR |
| 1659+ | 0.13 EUR |
| 2N7002BK,215 |
|
Hersteller: NXP/Nexperia/We-En
N-канальний ПТ, Udss, В = 60, Id = 350 мА, Ciss, пФ @ Uds, В = 50 @ 10, Qg, нКл = 0.6, Ugs(th) = 2.1 @ 250 мА, Р, Вт = 0,37 Вт, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
N-канальний ПТ, Udss, В = 60, Id = 350 мА, Ciss, пФ @ Uds, В = 50 @ 10, Qg, нКл = 0.6, Ugs(th) = 2.1 @ 250 мА, Р, Вт = 0,37 Вт, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 246 Stücke: