2N7002DW L6327 Infineon Technologies

Description: MOSFET 2N-CH 60V 0.3A SOT363, Part Status: Obsolete, Supplier Device Package: PG-SOT363-PO, Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V, Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 300mA, Drain to Source Voltage (Vdss): 60V, Power - Max: 500mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).