2N7002E-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.37 EUR |
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Technische Details 2N7002E-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V.
Weitere Produktangebote 2N7002E-T1-E3 nach Preis ab 0.13 EUR bis 1.53 EUR
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2N7002E-T1-E3 | Vishay / Siliconix |
MOSFETs 60V 0.24A |
auf Bestellung 354286 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002E-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 240MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V |
auf Bestellung 5215 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002E-T1-E3 | VISHAY |
Description: VISHAY - 2N7002E-T1-E3 - N CHANNEL MOSFET, 60V, 240mA TO-236 tariffCode: 85412900 MSL: MSL 1 - Unlimited productTraceability: Yes-Date/Lot Code rohsCompliant: YES Anzahl der Pins: 3Pin(s) euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - directShipCharge: 25 usEccn: EAR99 |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| 2N7002E-T1-E3 | VISHAY |
09+ |
auf Bestellung 1394018 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2N7002E-T1-E3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 60V 0.24A
MOSFETs 60V 0.24A
auf Bestellung 354286 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 0.71 EUR |
| 10+ | 0.4 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| 2N7002E-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
Description: MOSFET N-CH 60V 240MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
auf Bestellung 5215 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.43 EUR |
| 2N7002E-T1-E3 |
|
Hersteller: VISHAY
Description: VISHAY - 2N7002E-T1-E3 - N CHANNEL MOSFET, 60V, 240mA TO-236
tariffCode: 85412900
MSL: MSL 1 - Unlimited
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Anzahl der Pins: 3Pin(s)
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
directShipCharge: 25
usEccn: EAR99
Description: VISHAY - 2N7002E-T1-E3 - N CHANNEL MOSFET, 60V, 240mA TO-236
tariffCode: 85412900
MSL: MSL 1 - Unlimited
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Anzahl der Pins: 3Pin(s)
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
directShipCharge: 25
usEccn: EAR99
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| 2N7002E-T1-E3 |
|
Hersteller: VISHAY
09+
09+
auf Bestellung 1394018 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH