Produkte > PANJIT > 2N7002KDW_R1

2N7002KDW_R1 PanJit



Hersteller: PanJit
2N7002KDW_R1
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1019+0.17 EUR
2500+0.15 EUR
5000+0.14 EUR
Mindestbestellmenge: 1019 Stücke
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Technische Details 2N7002KDW_R1 PanJit

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.115A, Power dissipation: 0.12W, Case: SOT363, Gate-source voltage: ±20V, On-state resistance: 4Ω, Mounting: SMD, Gate charge: 0.8nC, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 0.8A.

Weitere Produktangebote 2N7002KDW_R1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
2N7002KDW_R1_00001 2N7002KDW_R1_00001 PanJit Semiconductor 2N7002KDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KDW_R1_00001 2N7002KDW.pdf
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH