2N7002KDWBQ-TP MCC (Micro Commercial Components)
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 60V 0.22A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 240mW (Tj)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.75nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
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Technische Details 2N7002KDWBQ-TP MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 60V 0.22A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 240mW (Tj), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 220mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V, Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.75nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote 2N7002KDWBQ-TP nach Preis ab 0.19 EUR bis 0.74 EUR
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2N7002KDWBQ-TP | MCC (Micro Commercial Components) |
Description: MOSFET 2N-CH 60V 0.22A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 240mW (Tj) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.75nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4339 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002KDWBQ-TP |
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Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 60V 0.22A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 240mW (Tj)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.75nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 0.22A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 240mW (Tj)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.75nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4339 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 39+ | 0.45 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.19 EUR |