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2N7002KPW-AQ

2N7002KPW-AQ Diotec Semiconductor

2n7002kpw.pdf Hersteller: Diotec Semiconductor
MOSFETs MOSFET, SOT-323, 60V, 0.31A, 150C, N, AEC-Q101
auf Bestellung 8333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+0.18 EUR
23+0.12 EUR
100+0.084 EUR
500+0.07 EUR
1000+0.062 EUR
3000+0.051 EUR
9000+0.032 EUR
Mindestbestellmenge: 16
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Technische Details 2N7002KPW-AQ Diotec Semiconductor

Description: MOSFET, SOT-323, 60V, 0.31A, 150, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Power Dissipation (Max): 275mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V, Qualification: AEC-Q101.

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2N7002KPW-AQ 2N7002KPW-AQ Hersteller : Diotec Semiconductor 2n7002kpw.pdf Description: MOSFET, SOT-323, 60V, 0.31A, 150
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 275mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2792 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
139+0.13 EUR
208+0.085 EUR
500+0.07 EUR
1000+0.063 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KPW-AQ Hersteller : Diotec Semiconductor 2n7002kpw.pdf MOSFET, SOT-323, N, 60V, 0.31A, 1.6
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2N7002KPW-AQ 2N7002KPW-AQ Hersteller : Diotec Semiconductor 2n7002kpw.pdf N-Channel Enhancement Mode Fet Automotive AEC-Q101
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2N7002KPW-AQ 2N7002KPW-AQ Hersteller : Diotec Semiconductor 2n7002kpw.pdf N-Channel Enhancement Mode Fet Automotive AEC-Q101
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2N7002KPW-AQ 2N7002KPW-AQ Hersteller : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF95B03CBD3B4A40D6&compId=2n7002kpw.pdf?ci_sign=a8c4c1bb4704362c80142531161ebec1ab786a59 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; Idm: 1.2A; 0.275W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.275W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Version: ESD
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
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2N7002KPW-AQ 2N7002KPW-AQ Hersteller : Diotec Semiconductor 2n7002kpw.pdf Description: MOSFET, SOT-323, 60V, 0.31A, 150
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 275mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KPW-AQ 2N7002KPW-AQ Hersteller : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF95B03CBD3B4A40D6&compId=2n7002kpw.pdf?ci_sign=a8c4c1bb4704362c80142531161ebec1ab786a59 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; Idm: 1.2A; 0.275W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.275W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH