2N7002KTB_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: SOT-523, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.046 EUR |
| 8000+ | 0.041 EUR |
| 12000+ | 0.038 EUR |
| 20000+ | 0.036 EUR |
| 28000+ | 0.034 EUR |
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Technische Details 2N7002KTB_R1_00001 Panjit International Inc.
Description: SOT-523, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-523 Flat Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V.
Weitere Produktangebote 2N7002KTB_R1_00001 nach Preis ab 0.035 EUR bis 0.41 EUR
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2N7002KTB_R1_00001 | Hersteller : Panjit International Inc. |
Description: SOT-523, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-523 Flat Leads Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V |
auf Bestellung 36888 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KTB_R1_00001 | Hersteller : Panjit |
MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected |
auf Bestellung 11974 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002KTB_R1_00001 | Hersteller : PanJit |
60V N-Channel Enhancement Mode MOSFET |
auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2N7002KTB_R1_00001 | Hersteller : PanJit |
60V N-Channel Enhancement Mode MOSFET |
auf Bestellung 3472 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002KTB-R1-00001 | Hersteller : Panjit |
MOSFETs SOT523 N CHAN 60V |
Produkt ist nicht verfügbar |
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| 2N7002KTB_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Case: SOT523 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |