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2N7002P,215

2N7002P,215 Nexperia USA Inc.

2N7002P.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 177074 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.059 EUR
6000+0.053 EUR
9000+0.05 EUR
15000+0.046 EUR
21000+0.044 EUR
30000+0.042 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details 2N7002P,215 Nexperia USA Inc.

Description: MOSFET N-CH 60V 360MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote 2N7002P,215 nach Preis ab 0.031 EUR bis 0.3 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
2N7002P,215 2N7002P,215 NEXPERIA 2N7002P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.28A; Idm: 1.2A; 420mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Technology: Trench
auf Bestellung 29930 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
705+0.1 EUR
989+0.072 EUR
1129+0.063 EUR
1214+0.059 EUR
1553+0.046 EUR
1887+0.038 EUR
2119+0.034 EUR
3000+0.031 EUR
Mindestbestellmenge: 455 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N7002P,215 2N7002P,215 Nexperia 2N7002P.pdf MOSFETs 2N7002P/SOT23/TO-236AB
auf Bestellung 358268 Stücke:
Lieferzeit 10-14 Tag (e)
10+0.3 EUR
16+0.18 EUR
100+0.11 EUR
500+0.083 EUR
1000+0.072 EUR
3000+0.06 EUR
6000+0.053 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N7002P,215 2N7002P,215 Nexperia USA Inc. 2N7002P.pdf Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 177074 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
97+0.18 EUR
157+0.11 EUR
500+0.082 EUR
1000+0.072 EUR
Mindestbestellmenge: 59 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N7002P,215 2N7002P.pdf
2N7002P,215
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.28A; Idm: 1.2A; 420mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Technology: Trench
auf Bestellung 29930 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
455+0.16 EUR
705+0.1 EUR
989+0.072 EUR
1129+0.063 EUR
1214+0.059 EUR
1553+0.046 EUR
1887+0.038 EUR
2119+0.034 EUR
3000+0.031 EUR
Mindestbestellmenge: 455 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N7002P,215 2N7002P.pdf
2N7002P,215
Hersteller: Nexperia
MOSFETs 2N7002P/SOT23/TO-236AB
auf Bestellung 358268 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+0.3 EUR
16+0.18 EUR
100+0.11 EUR
500+0.083 EUR
1000+0.072 EUR
3000+0.06 EUR
6000+0.053 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N7002P,215 2N7002P.pdf
2N7002P,215
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 177074 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
59+0.3 EUR
97+0.18 EUR
157+0.11 EUR
500+0.082 EUR
1000+0.072 EUR
Mindestbestellmenge: 59 Stücke
Im Einkaufswagen  Stück im Wert von  UAH