| Anzahl | Privatkunde |
|---|---|
| 3268+ | 0.054 EUR |
| 6000+ | 0.037 EUR |
| 9000+ | 0.035 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N7002P,215 Nexperia
Description: MOSFET N-CH 60V 360MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote 2N7002P,215 nach Preis ab 0.036 EUR bis 0.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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2N7002P,215 | Nexperia |
 Trans MOSFET N-CH 60V 0.36A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002P,215 | NEXPERIA |
Description: NEXPERIA - 2N7002P,215 - Leistungs-MOSFET, n-Kanal, 60 V, 360 mA, 1 ohm, TO-236AB, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 360mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.75V euEccn: NLR Verlustleistung: 420mW Bauform - Transistor: TO-236AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002P,215 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 360MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 149500 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002P,215 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.28A; Idm: 1.2A; 420mW Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Power dissipation: 0.42W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 1.2A Gate charge: 0.8nC Kind of package: reel; tape |
auf Bestellung 17295 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002P,215 | Nexperia |
MOSFETs 2N7002P/SOT23/TO-236AB |
auf Bestellung 225 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002P,215 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 360MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 149524 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002P,215 | NEXPERIA |
Description: NEXPERIA - 2N7002P,215 - Leistungs-MOSFET, n-Kanal, 60 V, 360 mA, 1 ohm, TO-236AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 360mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.75V euEccn: NLR Verlustleistung: 420mW Bauform - Transistor: TO-236AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 220091 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002P,215 | NEXPERIA |
Description: NEXPERIA - 2N7002P,215 - Leistungs-MOSFET, n-Kanal, 60 V, 360 mA, 1 ohm, TO-236AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 360mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.75V euEccn: NLR Verlustleistung: 420mW Bauform - Transistor: TO-236AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 220091 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 2N7002P,215 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 0.36A Automotive 3-Pin SOT-23 T/R
Trans MOSFET N-CH 60V 0.36A Automotive 3-Pin SOT-23 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3268+ | 0.054 EUR |
| 6000+ | 0.037 EUR |
| 9000+ | 0.036 EUR |
| 2N7002P,215 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - 2N7002P,215 - Leistungs-MOSFET, n-Kanal, 60 V, 360 mA, 1 ohm, TO-236AB, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 360mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.75V
euEccn: NLR
Verlustleistung: 420mW
Bauform - Transistor: TO-236AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (21-Jan-2025)
Description: NEXPERIA - 2N7002P,215 - Leistungs-MOSFET, n-Kanal, 60 V, 360 mA, 1 ohm, TO-236AB, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 360mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.75V
euEccn: NLR
Verlustleistung: 420mW
Bauform - Transistor: TO-236AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4033+ | 0.062 EUR |
| 9000+ | 0.055 EUR |
| 2N7002P,215 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 149500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.073 EUR |
| 6000+ | 0.064 EUR |
| 9000+ | 0.061 EUR |
| 15000+ | 0.056 EUR |
| 21000+ | 0.054 EUR |
| 30000+ | 0.051 EUR |
| 2N7002P,215 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.28A; Idm: 1.2A; 420mW
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 1.2A
Gate charge: 0.8nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.28A; Idm: 1.2A; 420mW
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 1.2A
Gate charge: 0.8nC
Kind of package: reel; tape
auf Bestellung 17295 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 705+ | 0.12 EUR |
| 989+ | 0.086 EUR |
| 1129+ | 0.075 EUR |
| 1214+ | 0.07 EUR |
| 1553+ | 0.055 EUR |
| 1887+ | 0.045 EUR |
| 2119+ | 0.04 EUR |
| 3000+ | 0.037 EUR |
| 2N7002P,215 |
|
Hersteller: Nexperia
MOSFETs 2N7002P/SOT23/TO-236AB
MOSFETs 2N7002P/SOT23/TO-236AB
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 0.36 EUR |
| 16+ | 0.21 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.099 EUR |
| 1000+ | 0.086 EUR |
| 3000+ | 0.071 EUR |
| 2N7002P,215 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 149524 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 0.38 EUR |
| 95+ | 0.23 EUR |
| 153+ | 0.14 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.088 EUR |
| 2N7002P,215 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - 2N7002P,215 - Leistungs-MOSFET, n-Kanal, 60 V, 360 mA, 1 ohm, TO-236AB, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 360mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.75V
euEccn: NLR
Verlustleistung: 420mW
Bauform - Transistor: TO-236AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (21-Jan-2025)
Description: NEXPERIA - 2N7002P,215 - Leistungs-MOSFET, n-Kanal, 60 V, 360 mA, 1 ohm, TO-236AB, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 360mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.75V
euEccn: NLR
Verlustleistung: 420mW
Bauform - Transistor: TO-236AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 220091 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 633+ | 0.39 EUR |
| 991+ | 0.24 EUR |
| 1981+ | 0.11 EUR |
| 2017+ | 0.11 EUR |
| 2584+ | 0.083 EUR |
| 2N7002P,215 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - 2N7002P,215 - Leistungs-MOSFET, n-Kanal, 60 V, 360 mA, 1 ohm, TO-236AB, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 360mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.75V
euEccn: NLR
Verlustleistung: 420mW
Bauform - Transistor: TO-236AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (21-Jan-2025)
Description: NEXPERIA - 2N7002P,215 - Leistungs-MOSFET, n-Kanal, 60 V, 360 mA, 1 ohm, TO-236AB, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 360mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.75V
euEccn: NLR
Verlustleistung: 420mW
Bauform - Transistor: TO-236AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 220091 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 633+ | 0.39 EUR |
| 991+ | 0.24 EUR |
| 1981+ | 0.11 EUR |
| 2017+ | 0.11 EUR |
| 2584+ | 0.083 EUR |