2N7002P,235 Nexperia
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.035 EUR |
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Technische Details 2N7002P,235 Nexperia
Description: MOSFET N-CH 60V 360MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote 2N7002P,235 nach Preis ab 0.025 EUR bis 0.042 EUR
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2N7002P,235 | Hersteller : Nexperia |
 Trans MOSFET N-CH 60V 0.36A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002P,235 | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 0.36A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 70000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002P,235 | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 0.36A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 70000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002P,235 | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 0.36A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 27060 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002P,235 | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 0.36A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 27060 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002P,235 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 60V 0.36A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002P,235 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 360MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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2N7002P,235 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 360MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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2N7002P,235 | Hersteller : Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
Produkt ist nicht verfügbar |
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2N7002P,235 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.28A; Idm: 1.2A; 420mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Pulsed drain current: 1.2A Power dissipation: 0.42W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Technology: Trench |
Produkt ist nicht verfügbar |