Technische Details 2N7370 Microchip Technology
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-254-3, TO-254AA, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V, Supplier Device Package: TO-254AA, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 100 W.
Weitere Produktangebote 2N7370
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| 2N7370 | Hersteller : Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254AA Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W |
Produkt ist nicht verfügbar |
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2N7370 | Hersteller : Microchip Technology | Darlington Transistors 100V Low-Profile Power BJT |
Produkt ist nicht verfügbar |