2SA1008-AZ Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Supplier Device Package: MP-25
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
auf Bestellung 27268 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 286+ | 1.73 EUR |
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Technische Details 2SA1008-AZ Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR, PNP, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V, Supplier Device Package: MP-25, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.5 W.