2SA1179N6-CPA-TB-E ON Semiconductor
| Anzahl | Preis |
|---|---|
| 6834+ | 0.079 EUR |
| 10000+ | 0.07 EUR |
| 100000+ | 0.057 EUR |
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Technische Details 2SA1179N6-CPA-TB-E ON Semiconductor
Description: TRANS PNP 50V 0.15A, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V, Frequency - Transition: 180MHz, Part Status: Obsolete, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW.
Weitere Produktangebote 2SA1179N6-CPA-TB-E nach Preis ab 0.079 EUR bis 0.11 EUR
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2SA1179N6-CPA-TB-E | Hersteller : ON Semiconductor |
 Trans GP BJT PNP 50V 0.15A 200mW 3-Pin SOT-23 T/R |
auf Bestellung 9525 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1179N6-CPA-TB-E | Hersteller : onsemi |
Description: TRANS PNP 50V 0.15A Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 180MHz Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 6408525 Stücke: Lieferzeit 10-14 Tag (e) |
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