2SA1208T onsemi
Hersteller: onsemi
Description: TRANS PNP 160V 0.07A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
| Anzahl | Preis |
|---|---|
| 865+ | 0.53 EUR |
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Technische Details 2SA1208T onsemi
Description: TRANS PNP 160V 0.07A 3-MP, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 3mA, 30mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V, Frequency - Transition: 150MHz, Supplier Device Package: 3-MP, Current - Collector (Ic) (Max): 70 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 900 mW.
Weitere Produktangebote 2SA1208T nach Preis ab 0.37 EUR bis 0.53 EUR
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2SA1208T | Sanyo |
Description: TRANS PNP 160V 0.07A 3-MP Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V Frequency - Transition: 150MHz Supplier Device Package: 3-MP Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 900 mW |
auf Bestellung 13000 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| 2SA1208T | ON Semiconductor |
Trans GP BJT PNP 160V 0.07A 900mW 3-Pin Case MP |
auf Bestellung 12088 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 2SA1208T |
|
Hersteller: Sanyo
Description: TRANS PNP 160V 0.07A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
Description: TRANS PNP 160V 0.07A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 865+ | 0.53 EUR |
| 2SA1208T |
|
Hersteller: ON Semiconductor
Trans GP BJT PNP 160V 0.07A 900mW 3-Pin Case MP
Trans GP BJT PNP 160V 0.07A 900mW 3-Pin Case MP
auf Bestellung 12088 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1304+ | 0.42 EUR |
| 10000+ | 0.37 EUR |