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2SA1298-Y,LF Toshiba


1AD2DCE210C4BC7E7FF3065801F3F3A88B859496F9C3505406FCAA411A287D00.pdf
Hersteller: Toshiba
Bipolar Transistors - BJT Bias Resistor Built-in transistor
auf Bestellung 832 Stücke:
Lieferzeit 10-14 Tag (e)
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6+0.65 EUR
10+0.39 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
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Technische Details 2SA1298-Y,LF Toshiba

Description: TRANS PNP 25V 0.8A S-MINI, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 25 V, Current - Collector (Ic) (Max): 800 mA, Part Status: Active, Supplier Device Package: S-Mini, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote 2SA1298-Y,LF nach Preis ab 0.17 EUR bis 0.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
2SA1298-Y,LF 2SA1298-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19261&prodName=2SA1298 Description: TRANS PNP 25V 0.8A S-MINI
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: S-Mini
auf Bestellung 1391 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.65 EUR
53+0.39 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1298-Y,LF docget.jsp?did=19261&prodName=2SA1298
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 25V 0.8A S-MINI
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: S-Mini
auf Bestellung 1391 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
53+0.39 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH