Produkte > TOSHIBA > 2SA1313-O(TE85L,F)

2SA1313-O(TE85L,F) Toshiba

Name: 2SA1313-O(TE85L,F)
Brand: Toshiba
SKU: 129488-4
Price: 3.29 EUR
Availability: InStock

2SA1313_datasheet_en_20140301-1090390.pdf

Hersteller: Toshiba
Bipolar Transistors - BJT S-MINI PLN TRANSIST Pd=200mW F=200MHz

auf Bestellung 5979 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
7+	0.47 EUR
10+	0.46 EUR
1000+	0.39 EUR
3000+	0.09 EUR
9000+	0.06 EUR

Mindestbestellmenge: 7

Im Einkaufswagen Stück im Wert von UAH

Produktrezensionen

Produktbewertung abgeben

Technische Details 2SA1313-O(TE85L,F) Toshiba

Description: TRANS PNP 50V 0.5A S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V, Frequency - Transition: 200MHz, Supplier Device Package: S-Mini, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW.

Weitere Produktangebote 2SA1313-O(TE85L,F)

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
	2SA1313-O(TE85L,F)	Hersteller : Toshiba Semiconductor and Storage	Description: TRANS PNP 50V 0.5A S-MINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: S-Mini Part Status: Not For New Designs Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
	2SA1313-O(TE85L,F)	Hersteller : Toshiba Semiconductor and Storage	Description: TRANS PNP 50V 0.5A S-MINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: S-Mini Part Status: Not For New Designs Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH