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2SA1313-O(TE85L,F)

2SA1313-O(TE85L,F) Toshiba

2SA1313_datasheet_en_20140301-1090390.pdf Hersteller: Toshiba
Bipolar Transistors - BJT S-MINI PLN TRANSIST Pd=200mW F=200MHz
auf Bestellung 142 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
60+0.87 EUR
88+ 0.6 EUR
138+ 0.38 EUR
1000+ 0.17 EUR
3000+ 0.12 EUR
9000+ 0.1 EUR
45000+ 0.088 EUR
Mindestbestellmenge: 60
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Technische Details 2SA1313-O(TE85L,F) Toshiba

Description: TRANS PNP 50V 0.5A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V, Frequency - Transition: 200MHz, Supplier Device Package: S-Mini, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW.

Weitere Produktangebote 2SA1313-O(TE85L,F)

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2SA1313-O(TE85L,F) 2SA1313-O(TE85L,F) Hersteller : Toshiba Semiconductor and Storage 2SA1313_datasheet_en_20140301.pdf?did=19265&prodName=2SA1313 Description: TRANS PNP 50V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
2SA1313-O(TE85L,F) 2SA1313-O(TE85L,F) Hersteller : Toshiba Semiconductor and Storage 2SA1313_datasheet_en_20140301.pdf?did=19265&prodName=2SA1313 Description: TRANS PNP 50V 0.5A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar