2SA1380E ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - 2SA1380E - 2SA1380 - TRANSISTOR
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SA1380E ONSEMI
Description: TRANS PNP 200V 0.1A TO-126, Part Status: Active, Packaging: Bulk, Supplier Device Package: TO-126, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Power - Max: 1.2 W, Voltage - Collector Emitter Breakdown (Max): 200 V, Current - Collector (Ic) (Max): 100 mA.
Weitere Produktangebote 2SA1380E nach Preis ab 0.44 EUR bis 9.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
 |
2SA1380E | onsemi |
Description: TRANS PNP 200V 0.1A TO-126 Part Status: Active Packaging: Bulk Supplier Device Package: TO-126 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Power - Max: 1.2 W Voltage - Collector Emitter Breakdown (Max): 200 V Current - Collector (Ic) (Max): 100 mA |
auf Bestellung 58 Stücke: Lieferzeit 10-14 Tag (e) |
|
||
| 2SA1380E | ON Semiconductor |
Trans GP BJT PNP 200V 0.1A 1200mW 3-Pin TO-126 |
auf Bestellung 2456 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 2SA1380E |
|
Hersteller: onsemi
Description: TRANS PNP 200V 0.1A TO-126
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-126
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 100 mA
Description: TRANS PNP 200V 0.1A TO-126
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-126
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 58+ | 9.23 EUR |
| 2SA1380E |
|
Hersteller: ON Semiconductor
Trans GP BJT PNP 200V 0.1A 1200mW 3-Pin TO-126
Trans GP BJT PNP 200V 0.1A 1200mW 3-Pin TO-126
auf Bestellung 2456 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1481+ | 0.44 EUR |